By Fowles G.R., Cassiday G.L.
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The first type includes metals that do not form binary carbides, and the second type includes metals that form at least one binary carbide. The two types of systems were generalized by the following chemical reactions: Type 1: Type 2: or M + SiC —> silicides + C M + SiC —> silicides + carbides M + SiC —> silicides + carbides + MxSiyCz Interestingly, although SiC is stable at high temperatures, has strong interatomic bonding and is chemically inert, its free energy of formation is relatively high.
For starters, LPCVD is a practical method to produce 3C-SiC and poly-SiC films using a wide variety of precursors. The lower processing pressures result in a much higher degree of thickness uniformity on large-area substrates (up to 6 inch diameter)28 than APCVD. Vacuum processing significantly reduces the incorporation of impurities from slowly outgassing reactor components. And while film growth rates tend to be much lower than for APCVD processes, LPCVD reactors generally accommodate more substrates, especially systems that utilize resistive heating.
Analytical mechanics by Fowles G.R., Cassiday G.L.